R. L. van Meirhaeghe : rechercher sur Z-Library

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1

Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal–semiconductor Schottky contacts

Ö. Güllü, M. Biber, R.L. Van Meirhaeghe, A. Türüt

Journal:

Thin Solid Films

Année:

2008

Langue:

english

Fichier:

PDF, 518 KB

english, 2008

2

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts

A.S. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon, W. De Bosscher, R.J. Schreutelkamp

Journal:

Solid-State Electronics

Année:

1993

Langue:

english

Fichier:

PDF, 739 KB

english, 1993

3

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

C. Detavernier, R.L. Van Meirhaeghe, W. Vandervorst, K. Maex

Journal:

Microelectronic Engineering

Année:

2004

Langue:

english

Fichier:

PDF, 471 KB

english, 2004

4

In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

W. Knaepen, C. Detavernier, R.L. Van Meirhaeghe, J. Jordan Sweet, C. Lavoie

Journal:

Thin Solid Films

Année:

2008

Langue:

english

Fichier:

PDF, 850 KB

english, 2008

5

Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors

Leroy, W. P., Detavernier, C., Van Meirhaeghe, R. L., Kellock, A. J., Lavoie, C.

Journal:

Journal of Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 706 KB

english, 2006

6

Evaluation of the hygienogram scores and related data obtained after cleaning and disinfection of poultry houses in Flanders during the period 2007 to 2014

Maertens, H, De Reu, K, Van Weyenberg, S, Van Coillie, E, Meyer, E, Van Meirhaeghe, H, Van Immerseel, F, Vandenbroucke, V, Vanrobaeys, M, Dewulf, J

Journal:

Poultry Science

Année:

2018

Langue:

english

Fichier:

PDF, 295 KB

english, 2018

7

Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

M Depas, B Vermeire, P.W Mertens, R.L Van Meirhaeghe, M.M Heyns

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 709 KB

english, 1995

8

Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma

Qi Xie, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland L Van Meirhaeghe, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu

Journal:

Microelectronic Engineering

Année:

2008

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2008

9

Atomic layer deposition of titanium nitride from TDMAT precursor

J. Musschoot, Q. Xie, D. Deduytsche, S. Van den Berghe, R.L. Van Meirhaeghe, C. Detavernier

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 434 KB

english, 2009

10

Electrical characteristics of CoSi2/n-Si(1 0 0) Schottky barrier contacts formed by solid state reaction

Shiyang Zhu, C Detavernier, R.L Van Meirhaeghe, F Cardon, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 218 KB

english, 2000

11

In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

Tao Chen, Shu-Yi Liu, Qi Xie, Christophe Detavernier, R. L. Van Meirhaeghe, Xin-Ping Qu

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 546 KB

english, 2010

12

Single-domain antibody fragments with high conformational stability

Mireille Dumoulin, Katja Conrath, Annemie Van Meirhaeghe, Filip Meersman, Karel Heremans, Leon G.J. Frenken, Serge Muyldermans, Lode Wyns, Andre Matagne

Journal:

Protein Science

Année:

2002

Langue:

english

Fichier:

PDF, 264 KB

english, 2002

13

Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes

Hanselaer, P. L., Laflere, W. H., Van Meirhaeghe, R. L., Cardon, F.

Journal:

Journal of Applied Physics

Année:

1984

Langue:

english

Fichier:

PDF, 699 KB

english, 1984

14

36. An International Multicenter Randomized Comparison of Balloon Kyphoplasty and Non-surgical Management in Patients with Acute Vertebral Body Compression Fractures

Douglas Wardlaw, Steven Boonen, Leonard Bastian, Jan Van Meirhaeghe, Steve Cummings

Journal:

The Spine Journal

Année:

2007

Langue:

english

Fichier:

PDF, 46 KB

english, 2007

15

132. An International Multicenter Randomized Comparison of Balloon Kyphoplasty and Non-Surgical Management in Patients with Acute Vertebral Body Compression Fractures

Douglas Wardlaw, Steven Cummings, Jan Van Meirhaeghe, Leonard Bastian, John Tillman, Jonas Ranstam, Richard Eastell, Peter Shabe, Karen Talmadge, Steven Boonen

Journal:

The Spine Journal

Année:

2008

Langue:

english

Fichier:

PDF, 139 KB

english, 2008

16

5. An International Multicenter Randomized Comparison of Balloon Kyphoplasty and Non-Surgical Management in Patients with Acute Vertebral Body Compression Fractures

Douglas Wardlaw, Steven Cummings, Jan Van Meirhaeghe, Leonard Bastian, John Tillman, Jonas Ranstam, Richard Eastell, Peter Shabe, Karen Talmadge, Steven Boonen

Journal:

The Spine Journal

Année:

2009

Langue:

english

Fichier:

PDF, 41 KB

english, 2009

17

Clinical evaluation of the preliminary safety and effectiveness of a minimally invasive interspinous process device APERIUS®in degenerative lumbar spinal stenosis with symptomatic neurogenic intermittent claudication

Jan Van Meirhaeghe, Patrick Fransen, Daniele Morelli…

Journal:

European Spine Journal

Année:

2012

Langue:

english

Fichier:

PDF, 365 KB

english, 2012

18

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Comparison of the Ru thin films grown on Si, TiN/Si and TaN/Si substrates by plasma enhanced atomic layer deposition

Xie, Qi, Musschoot, Jan, Detavernier, Christophe, Deduytsche, Davy, Van Meirhaeghe, Roland L., Jiang, Yu-Long, Ru, Guo-Ping, Li, Bing-Zong, Qu, Xin-Ping

Année:

2008

Langue:

english

Fichier:

PDF, 2.62 MB

english, 2008

19

Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide

Musschoot, J., Deduytsche, D., Poelman, H., Haemers, J., Van Meirhaeghe, R. L., Van den Berghe, S., Detavernier, C.

Journal:

Journal of The Electrochemical Society

Année:

2009

Langue:

english

Fichier:

PDF, 662 KB

english, 2009

20

A Randomized Trial of Balloon Kyphoplasty and Nonsurgical Management for Treating Acute Vertebral Compression Fractures

Van Meirhaeghe, Jan, Bastian, Leonard, Boonen, Steven, Ranstam, Jonas, Tillman, John B., Wardlaw, Douglas

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 12.07 MB

english, 2013

21

The Influence of Ti Capping Layers on CoSi2 Formation in the Presence of Interfacial Oxide

Detavernier, C., Donaton, R. A., Maex, K., Jin, S., Bender, H., Van Meirhaeghe, R., Cardon, F.

Journal:

MRS Proceedings

Année:

1999

Langue:

english

Fichier:

PDF, 1.53 MB

english, 1999

22

CoSi2 formation using a Ti capping layer - The influence of processing conditions on CoSi2 nucleation.

Detavernier, C., Van Meirhaeghe, R.L., Maex, K.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 78 KB

english, 2001

23

Balloon kyphoplasty for the treatment of acute vertebral compression fractures: 2-year results from a randomized trial

Steven Boonen, Jan Van Meirhaeghe, Leonard Bastian, Steven R Cummings, Jonas Ranstam, John B Tillman, Richard Eastell, Karen Talmadge, Douglas Wardlaw

Journal:

Journal of Bone and Mineral Research

Année:

2011

Langue:

english

Fichier:

PDF, 576 KB

english, 2011

24

Photocurrent oscillations at the n-GaAs/electrolyte interface

R.L. Van Meirhaeghe, F. Cardon, W.P. Gomes

Journal:

Electrochimica Acta

Année:

1979

Langue:

english

Fichier:

PDF, 326 KB

english, 1979

25

An XPS study of the dopants' valence states and the composition of CaS1 − xSex:Eu and SrS1 − xSex:Ce thin film electroluminescent devices

R. Vercaemst, D. Poelman, R.L. Van Meirhaeghe, L. Fiermans, W.H. Laflère, F. Cardon

Journal:

Journal of Luminescence

Année:

1995

Langue:

english

Fichier:

PDF, 955 KB

english, 1995

26

The influence of Se-coevaporation on the emission spectra of CaS:Eu and SrS:Ce thin film electroluminescent devices

D. Poelman, R. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Journal of Luminescence

Année:

1995

Langue:

english

Fichier:

PDF, 388 KB

english, 1995

27

Electron trapping in the oxide layer of MIS-type Al Au Ag and Sn-n-type GaAs Schottky barriers

W.H. Laflère, R.L. Van Meirhaeghe, F. Cardon

Journal:

Solid-State Electronics

Année:

1982

Langue:

english

Fichier:

PDF, 419 KB

english, 1982

28

Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments

R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Année:

1982

Langue:

english

Fichier:

PDF, 422 KB

english, 1982

29

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Année:

1986

Langue:

english

Fichier:

PDF, 586 KB

english, 1986

30

A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi2/Si Schottky barriers

W. De Bosscher, R.L. Van Meirhaeghe, A. De Laere, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Année:

1988

Langue:

english

Fichier:

PDF, 621 KB

english, 1988

31

On the electrical properties, the interfacial reactivity and the thermal stability of CoSi2/-, TiSi2/-, Co/- and Ti/p-InP Schottky barriers

L.M.O. Van den Berghe, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Année:

1990

Langue:

english

Fichier:

PDF, 605 KB

english, 1990

32

Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen

W. De Bosscher, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Année:

1991

Langue:

english

Fichier:

PDF, 707 KB

english, 1991

33

Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation

M. Depas, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 828 KB

english, 1994

34

Hydrogen passivation caused by “soft” sputter etch cleaning of Si

A.S Vercaemst, R.L Van Meirhaeghe, W.H Laflere, F Cardon

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 465 KB

english, 1995

35

Tunnel oxides grown by rapid thermal oxidation

M. Depas, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Microelectronic Engineering

Année:

1993

Langue:

english

Fichier:

PDF, 317 KB

english, 1993

36

A detailed XPS study of the rare earth compounds EuS and EuF3

R. Vercaemst, D. Poelman, L. Fiermans, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Année:

1995

Langue:

english

Fichier:

PDF, 759 KB

english, 1995

37

An X-ray photoelectron spectroscopy study of BaAl2S4 thin films

Philippe F. Smet, Jo E. Van Haecke, Roland L. Van Meirhaeghe, Dirk Poelman

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Année:

2005

Langue:

english

Fichier:

PDF, 322 KB

english, 2005

38

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K. Opsomer, E. Simoen, C. Claeys, K. Maex, C. Detavernier, R.L. Van Meirhaeghe, S. Forment, P. Clauws

Journal:

Materials Science in Semiconductor Processing

Année:

2006

Langue:

english

Fichier:

PDF, 207 KB

english, 2006

39

Yttrium silicide formation and its contact properties on Si(1 0 0)

Wei Huang, Guo-Ping Ru, C. Detavernier, R.L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li

Journal:

Microelectronic Engineering

Année:

2008

Langue:

english

Fichier:

PDF, 1.78 MB

english, 2008

40

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

W. Knaepen, J. Demeulemeester, D. Deduytsche, J.L. Jordan-Sweet, A. Vantomme, R.L. Van Meirhaeghe, C. Detavernier, C. Lavoie

Journal:

Microelectronic Engineering

Année:

2010

Langue:

english

Fichier:

PDF, 694 KB

english, 2010

41

In situ study of the formation of silicide phases in amorphous Co–Si mixed layers

C. Van Bockstael, K. De Keyser, J. Demeulemeester, A. Vantomme, R.L. Van Meirhaeghe, C. Detavernier, J.L. Jordan-Sweet, C. Lavoie

Journal:

Microelectronic Engineering

Année:

2010

Langue:

english

Fichier:

PDF, 425 KB

english, 2010

42

Texture of atomic layer deposited ruthenium

J. Musschoot, Q. Xie, D. Deduytsche, K. De Keyser, D. Longrie, J. Haemers, S. Van den Berghe, R.L. Van Meirhaeghe, J. D’Haen, C. Detavernier

Journal:

Microelectronic Engineering

Année:

2010

Langue:

english

Fichier:

PDF, 502 KB

english, 2010

43

TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition

Qi Xie, Davy Deduytsche, Jan Musschoot, Roland L. Van Meirhaeghe, Christophe Detavernier, Shao-Feng Ding, Xin-Ping Qu

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 1.20 MB

english, 2011

44

Schottky barrier characteristics of ternary silicide Co1−xNixSi2 on n-Si(1 0 0) contacts formed by solid phase reaction of multilayer

Shiyang Zhu, R.L. Van Meirhaeghe, S. Forment, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 336 KB

english, 2004

45

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Guo-Ping Ru, R.L. Van Meirhaeghe, S. Forment, Yu-Long Jiang, Xin-Ping Qu, Shiyang Zhu, Bing-Zong Li

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 364 KB

english, 2005

46

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

W.P. Leroy, K. Opsomer, S. Forment, R.L. Van Meirhaeghe

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 425 KB

english, 2005

47

CoSi2 formation in the presence of Ti, Ta or W

C. Detavernier, C. Lavoie, R.L. Van Meirhaeghe

Journal:

Thin Solid Films

Année:

2004

Langue:

english

Fichier:

PDF, 808 KB

english, 2004

48

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Xin-Ping Qu, Yu-Long Jiang, Guo-Ping Ru, Fang Lu, Bing-Zong Li, C. Detavernier, R.L. Van Meirhaeghe

Journal:

Thin Solid Films

Année:

2004

Langue:

english

Fichier:

PDF, 347 KB

english, 2004

49

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Qi Xie, Yu-Long Jiang, Jan Musschoot, Davy Deduytsche, Christophe Detavernier, Roland L. Van Meirhaeghe, Sven Van den Berghe, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu

Journal:

Thin Solid Films

Année:

2009

Langue:

english

Fichier:

PDF, 978 KB

english, 2009

50

Effects of rapid thermal annealing on electron beam evaporated SrS : Ce thin film electroluminescent devices made in H2S ambient

D Wauters, D Poelman, R.L Van Meirhaeghe, F Cardon

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 218 KB

english, 1999